Range and straggle for implants into silicon
antimony arsenic) implant energy (keV) B P As Sb 0.001 0.01 0.1 10 100 1000 boron phosphorus antimony arsenic) implant energy (keV) B P As Sb Range and straggle for implants into silicon. EE 432/532 ion implantation – 2 Ion implant – example 1 A silicon wafer with n-type background doping is subjected to a boron